Elemental Analysis by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) (CAT#: STEM-EA-0215-ZJF)

Introduction

With excellent detection limits, time-of-flight SIMS (TOF-SIMS) provides a full elemental and molecular analysis. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a surface analytical technique that focuses a pulsed beam of primary ions onto a sample surface, producing secondary ions in a sputtering process. These secondary ions provide information about the molecular, inorganic, and elemental species present on the surface. Among surface analytical techniques, TOF-SIMS is the most surface-sensitive, with a depth of analysis of only approximately one nanometer. Detection limits for most elements are in the range of parts-per-thousand to parts-per-million using this technique.
The TOF-SIMS technique offers the following advantages of analysis:
• Surface sensitive, top few monolayers
• Detection limits in the ppm range
• Survey analysis
• Survey depth profiles
• Elemental and molecular information
• Can analyze insulators and conductors
• Sub-µm spatial resolution possible in imaging mode
• Major element composition possible, in some applications
TOF-SIMS technical specifications:
• Signal Detected: Elemental and molecular ions
• Elements Detected: Full periodic table coverage, plus molecular species
• Detection Limits: Fraction of a monolayer, 107 – 1010 at/cm2 (metal on semiconductor), down to 1 ppm bulk concentration in depth profiles
• Depth Resolution: 1-3 monolayers (Static mode), down to 1 nm (depth profiling)
• Information Depth: Below 1 nm (static mode), up to 10 μm (depth profiling)
• Imaging/Mapping: Yes
• Lateral Resolution/Probe Size: Down to 0.2 µm
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