Elemental Analysis by Total Reflection X-Ray Fluorescence (TXRF) (CAT#: STEM-EA-0210-ZJF)

Total Reflection X-ray Fluorescence (TXRF) utilizes total reflection of a known wavelength of primary X-Rays, to reduce background scatter and noise in the secondary emission (Fluorescence) from a targeted sample surface. Through this technique, the intensity of the Secondary X-Ray spectrum emitted by analyte atoms on the surface of a thin sample (100 microns) is increased. The sample is deposited as a thin layer on a polished sample carrier in this technique. The incident primary X-ray beam impinges on the sample carrier at an angle below the critical angle for X-ray total reflection. Critical angles are determined by the polished carrier material and the wavelength of the incident X-ray. Typical critical angles range from 0.040 for Plexiglass at 35keV to 0.550 for Gold at 8.4 keV. The atoms in the sample, when excited by impinging primary X-rays, emit secondary X-rays (fluorescence), which are counted and measured by a solid-state detector. The detector is placed directly above the sample at a distance of about 0.5 mm to 1 mm, to capture maximum fluorescence radiation from the sample. The measured signal is analyzed by energy intensity, providing an energy dispersive spectrum. The fluorescence signal emitted from the sample is characteristic of the elemental contaminants present.

Semiconductors, chemical, biotechnology, metallurgy, environmental, medicine, geology, forensics, etc.

1. Sample preparation
2. Sample analysis by TXRF
3. Data output

• TXRF system
• Sample material: thin films, finely powdered solids, suspension depositions, dried liquids, polymers.