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Probing Surface Defects of InP Quantum Dots by X-Ray Emission Spectroscopy (XES) (CAT#: STEM-ST-0293-WXH)

Introduction

Indium phosphide (InP) quantum dots (QDs) are the leading cadmium-free emissive material for luminescence downconversion applications.




Principle

XES is an element-specific method primarily used to analyze the partially occupied electronic structure of materials. The technique is one of the photon-in-photon-out spectroscopies in which an incident X-ray photon is used to excite a core electron, which leads to the transition of the electron from the ground state to the excited state, and then the excited state of the electron decays with the emission of an X-ray photon in order to fill the core hole.

Applications

Used for the study of electronic structure and for the qualitative and quantitative analysis of substances.

Materials

• X-ray emission spectrometer
• X-ray generating equipment (X-ray tube)
• Collimators
• Monochromators
• X-ray detectors
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