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Thermal Conductivity Measurements of GaAs Nanowire Arrays by 3ω-method (CAT#: STEM-PPA-0047-WXH)

Introduction

Vertical nanowire (NW) arrays are the basis for a variety of nanoscale devices. Understanding heat transport in these devices is an important concern, especially for prospective thermoelectric applications.
GaAs (gallium arsenide) is most commonly used in making of a solar cell, because it absorbs relatively more energy from the incident solar radiations having relatively higher absorption co-efficient.




Principle

The process involves a metal heater applied to the sample that is heated periodically. The temperature oscillations thus produced are then measured. The thermal conductivity and thermal diffusivity of the sample can be determined from their frequency dependence.

Applications

Determining the thermal conductivities of bulk material (i.e. solid or liquid) and thin layers

Procedure

1. Sample preparation and mounting
2. Experimental condition setting
3. Experiment start: Turn on the 3ω signal generator and lock-in amplifier, and control the temperature controller to make the sample temperature reach the set value. When the sample reaches a stable state, data acquisition and processing begin.
4. Data processing
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