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Thermal Conductivity Measurements of Si3N4 thin films by 3ω-method (CAT#: STEM-PPA-0042-WXH)

Introduction

Silicon Nitride (Si3N4) offers one of the greatest cross-sections of material properties across both oxide and non-oxide fine ceramic groups. It is a specialist solution for extreme working environments, meeting the requirements for some of the harshest industrial conditions on earth.
The applications of thin film technologies are increasing. A variety of different ceramic and hard coating materials are deposited. Silicon nitride is one of the materials which seems to be quite interesting for the use as coating material. An use as a wear and corrosion protective coating seems to be conceivable.




Principle

The process involves a metal heater applied to the sample that is heated periodically. The temperature oscillations thus produced are then measured. The thermal conductivity and thermal diffusivity of the sample can be determined from their frequency dependence.

Applications

Determining the thermal conductivities of bulk material (i.e. solid or liquid) and thin layers

Procedure

1. Sample preparation and mounting
2. Experimental condition setting
3. Experiment start: Turn on the 3ω signal generator and lock-in amplifier, and control the temperature controller to make the sample temperature reach the set value. When the sample reaches a stable state, data acquisition and processing begin.
4. Data processing
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